| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem wherein, in a conventional semiconductor device, an on-current of a parasitic Tr flows in a surface of a semiconductor layer, whereby an element is thermally broken down. SOLUTION: In this semiconductor device, a P-type diffusion layer 14 and an N-type diffusion layer 10 as a drain lead region are formed on an N-type diffusion layer 9 as a drain region. The P-type diffusion layer 14 is disposed between a source region and the drain region of an MOS transistor 1. By this structure, even when a positive ESD surge is applied to a drain electrode 28, causing an on-current I1 of a parasite Tr 1 to flow, the current path of the on-current I1 of the parasite Tr 1 is established in a deep part side of an epitaxial layer, whereby the thermal breakdown of the MOS transistor 1 is prevented. COPYRIGHT: (C)2010,JPO&INPIT |
