| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the semiconductor by which a BiCMOS semiconductor integrated circuit device is manufactured at a low cost and a high yield. Ž<P>SOLUTION: An epitaxial base layer 24 comprising a p-type single crystal semiconductor is formed in an island shape on a substrate region 17 of a semiconductor layer 2 surrounded by a shallow trench 3 and a deep trench 6. A silicon nitride film 42 and a silicon oxide film 43 are formed on an entire surface of the semiconductor layer 2 including the island region. At least two apertures are formed at the silicon nitride film 42 and silicon oxide film 43 in different positions of the island region, and a semiconductor film 44 is formed on the silicon nitride film 42 and the silicon oxide film 43 on which the aperture portions are formed. The semiconductor film 44 is selectively removed, and a base electrode connected to the island region in one aperture and an emitter electrode connected to the island region in the other aperture are simultaneously formed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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