| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a method of manufacturing a solid-state imaging device in which a silicon oxide film in a gate insulating film can be made into a single layer without increasing an amount of oxidation, thereby, a gate insulating film, in which temporal degradation of read-out voltage is reduced, can be formed instead of an ONO film without greatly reviewing the manufacturing parameter of ion implantation condition. Ž<P>SOLUTION: In the method of manufacturing the solid-state imaging device, when a second insulating film is formed after forming a first gate electrode 8, a CVD oxide film 9 is formed in the surface of the first gate electrode 8 and the surface of silicon substrate 1 by the deposition of a silicon oxide. Then, the CVD oxide film 9 is subjected to thermal oxidation treatment so that the oxide film thickness thereof may increase. Thus, the second insulating films 10 and 12 of the oxide film single layer structure are formed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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