| 摘要 |
Method of producing single-walled and multi-walled, single-crystalline, tubular nanostructures, made of an inorganic substance (e.g., silicon), and single-walled and multi-walled, single-crystalline, tubular nanostructures produced thereby, are disclosed. Also disclosed are devices into which the nanostructures are integrated. The methods described herein are used to reproducibly and controllably producing single-crystalline nanostructures with well-defined shape, diameter and/or interwall distance, chemical composition and morphology, using sacrificial layers (such as Germanium). |
