| 摘要 |
<p>An n- type semiconductor substrate (1) is prepared, said substrate having a first main surface (1a) and a second main surface (1b) that oppose each other, and a p+ type semiconductor region (3) being formed on the first main surface (1a) side. By means of irradiation with pulsed laser light, irregular recesses and projections (10) are formed in at least the region of the second main surface (1a) of the n- type semiconductor substrate (1) that opposes the p+ type semiconductor region (3). After the irregular recesses and projections (10) are formed, an accumulation layer (11) having a higher impurity concentration than that of the n- type semiconductor substrate (1) is formed on the second main surface (1b) side of the n- type semiconductor substrate (1). After the accumulation layer (11) is formed, the n- type semiconductor substrate (1) is heat-treated.</p> |
