| 摘要 |
<p>PURPOSE: A formation method is provided to reduce mask manufacturing costs by not manufacturing a mask according to each layer when a pattern is formed according to each layer. CONSTITUTION: A photosensitive film is spread on the upper part of a semiconductor substrate(W) in which an etched layer is formed. A photosensitive pattern is formed with an exposure and development process which uses an exposure mask with a variable light transmission layer. By using the exposure mask and a general exposure mask(20) in which the variable light transmission layer is included, the exposure development process is executed. The etched layer is etched by using the photosensitive pattern as an etching mask. The exposure mask, in which the variable light transmission layer included, is arranged on the upper part of the general exposure mask.</p> |
