| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a bonded wafer which does not complicate polishing work, is excellent in productivity, inexpensive and can easily controls a thickness of an active layer in a predefined standard. <P>SOLUTION: The method for manufacturing the bonded wafer includes the steps of: forming a bonded body by bonding a supporting wafer with an active layer wafer (S1); forming an active layer of a first thickness by processing the active layer wafer side of the bonded body (S2); sticking a plurality of the bonded bodies formed with the active layers on a polishing plate and polishing the active layers to a second thickness (S3); optically measuring the second thickness in the state that the polished bonded bodies are stuck to the polishing plate (S4); and re-polishing the active layers to a third thickness (S5) based on the second thickness measured. <P>COPYRIGHT: (C)2010,JPO&INPIT |
