| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a memory circuit which is highly adaptive to a logic process and has high tolerance of noise, and a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes a semiconductor substrate where a memory cell array comprising a plurality of memory cells arranged in a matrix along a first and a second direction and a plurality of sense amplifiers including first and second sense amplifiers are formed, the memory cells each comprising a transistor having an insulating gate electrode, and a bit contact region and the other source/drain region formed at both sides thereof, and a capacitor connected to the other source/drain region. The semiconductor device includes, above the memory cell array, a plurality of bit lines extending along the first direction, connected to a plurality of bit line contact regions, and arranged successively in the second direction. A first pair of bit lines connected to a first sense amplifier are formed of a first wiring layer, and a second pair of bit lines connected to a second sense amplifier are formed of a second wiring layer different from the first wiring layer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
