发明名称 SEMICONDUCTOR SENSOR AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor sensor has a first semiconductor layer as a base, an insulating layer formed on the first semiconductor layer, and a second semiconductor layer formed on the insulating layer. A recess is formed from a bottom surface of the first semiconductor layer up to a top surface of the insulating layer. The second semiconductor layer is covered with the insulating layer in an outer circumference of a top surface of the recess. A sensitive region of the second semiconductor layer is exposed in a region except the outer circumference of the top surface of the recess.
申请公布号 US2010219490(A1) 申请公布日期 2010.09.02
申请号 US20100712756 申请日期 2010.02.25
申请人 OMRON CORPORATION 发明人 ADACHI YOSHITAKA;INOUE KATSUYUKI
分类号 H01L29/84;H01L21/02 主分类号 H01L29/84
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