| 摘要 |
Provided is a substrate processing apparatus. The apparatus comprises: a process chamber configured to accommodate substrates which are horizontally oriented and stacked in multiple stages and process the substrates; a process gas supply unit configured to supply a process gas to the process chamber; an inert gas supply unit configured to supply an inert gas to the process chamber; and an exhaust unit configured to exhaust the process chamber. The process gas supply unit comprises a process gas supply nozzle. The inert gas supply unit comprises inert gas supply nozzles disposed at both sides of the process gas supply nozzle. Each of the inert gas supply nozzles comprises at least one first inert gas ejection hole formed in a region where the substrates are stacked and at least one second inert gas ejection hole formed in a region where the substrates are not stacked. |
