| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser which eliminates the need for wire bonding upon mounting the semiconductor laser and exhibits low ohmic resistance, and to provide a method of manufacturing the semiconductor laser. Ž<P>SOLUTION: The semiconductor laser includes a first conductive clad layer 20, an active layer 30, a current block 40, a second conductive clad layer 50, a contact layer 60, a first electrode 70, a second electrode 80, and a through-electrode 90. The active layer 30 is formed on a first main surface of the first conductive clad layer 20, and the current block 40 is formed on both sides of the active layer 30 on the first conductive clad layer 20. The second conductive clad layer 50 is formed to extend over the active layer 30 and the current block 40, and the contact layer 60 is formed on the second conductive clad layer 50. The first electrode 70 is formed on a second main surface of the first conductive clad layer 20, while the second electrode 80 is formed on the contact layer 60. The through-electrode 90 is formed in a through-hole penetrating the first conductive clad layer 20, the current block 40, the second conductive clad layer 50, and the contact layer 60, and is electrically connected to either of the first electrode 70 and the second electrode 80. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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