| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can manufacture a semiconductor device having high reliability of connection at a high productivity rate. Ž<P>SOLUTION: The method of manufacturing the semiconductor device includes the steps of preparing a first solder layer 42 on an electrode prepared on a semiconductor substrate 10, preparing a resin section 44 on the first solder layer 42, preparing a second solder layer 46 on the resin section 44, and performing heat treatment on the first and second solder layers 42 and 46. The heat treatment heats up and melts a solder paste (or solder) composing the first and second solder layers 42 and 46, thus enabling a solder layer to be formed that covers the resin section 44. The appearance of an external terminal may be formed into a globular shape through surface tension. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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