发明名称 METHOD FOR MANUFACTURING ACTIVE ELEMENT SUBSTRATE, ACTIVE ELEMENT SUBSTRATE, AND ACTIVE TYPE DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing an active element substrate exhibiting high aperture ratio and high transmittance, by which parasitic capacitance can be suppressed without increasing man hours. SOLUTION: The method includes a step of forming transparent insulating layers 9 and 10 on a pixel TFT 7 and signal wiring, the transparent insulating layers having contact holes 9a and 10a respectively. The step includes: a step of forming the first insulating layer 9 so as to cover the pixel TFT7 and signal wiring, the first insulating layer being not photoconductive; a step of forming the second insulating layer 10 so as to cover the first insulating layer 9, the second insulating layer being photoconductive; a step of patterning the second insulating layer 10 by exposure and development; and a step of etching the first insulating layer 9 with the second insulating layer 10 as a mask. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010191283(A) 申请公布日期 2010.09.02
申请号 JP20090036780 申请日期 2009.02.19
申请人 SHARP CORP 发明人 KATSUI HIROMITSU
分类号 G09F9/30;G02F1/1368;G09F9/00;H01L21/336;H01L21/768;H01L29/786 主分类号 G09F9/30
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