| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device, wherein a smooth silicon carbide surface can be obtained while holding high impurity activation ratio. SOLUTION: The method of manufacturing the silicon carbide semiconductor device includes: a step of implanting impurity into a surface layer of a silicon carbide substrate 1; a step of forming a carbon film 7 on the surface of the silicon carbide substrate 1; a step of placing the carbon film 7 on a sample board 22a of a susceptor arranged in an activation heat treatment furnace so that the carbon film 7 is brought into contact with the susceptor; and a step of applying activation heat treatment to the silicon carbide substrate 1 by using the carbon film 7 as a protective film. COPYRIGHT: (C)2010,JPO&INPIT |
