| 发明名称 |
METHOD OF FORMING A LOW RESISTANCE SEMICONDUCTOR CONTACT AND STRUCTURE THEREFOR |
| 摘要 |
In one embodiment, silicide layers are formed on two oppositely doped adjacent semiconductor regions. A conductor material is formed electrically contacting both of the two silicides.
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| 申请公布号 |
US2010219531(A1) |
申请公布日期 |
2010.09.02 |
| 申请号 |
US20100766601 |
申请日期 |
2010.04.23 |
| 申请人 |
GRIVNA GORDON M;VENKATRAMAN PRASAD |
发明人 |
GRIVNA GORDON M.;VENKATRAMAN PRASAD |
| 分类号 |
H01L23/532 |
主分类号 |
H01L23/532 |
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