发明名称 |
RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD OF FORMING RESIST PATTERN USING THE SAME |
摘要 |
There is provided a composition for forming a resist underlayer film not only having a large selection ratio of a dry etching rate but also exhibiting desired values of the k value and of the refractive index n at a short wavelength such as a wavelength of an ArF excimer laser. A resist underlayer film forming composition for lithography comprising: a linear polymer; and a solvent, wherein a backbone of the linear polymer has a unit structure in which 2,4-dihydroxy benzoic acid is introduced through an ester bond and an ether bond.
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申请公布号 |
US2010221657(A1) |
申请公布日期 |
2010.09.02 |
申请号 |
US20080682819 |
申请日期 |
2008.10.16 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
SAKAMOTO RIKIMARU;HIROI YOSHIOMI;ISHIDA TOMOHISA;ENDO TAKAFUMI |
分类号 |
G03F7/20;G03F7/004 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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