发明名称 METHOD FOR THE PRODUCTION OF SOLAR GRADE SILICON
摘要 <p>The present invention relates to a method for the preparation of solar grade silicon comprising crystallization of large high purity silicon crystals in a hyper eutectic binary or ternary alloy containing silicon, or a refined silicon melt, wherein small silicon crystals are added to the melt and the resulting large silicon crystals are separated from the melt. The separation may be performed by centrifugation or filtration.</p>
申请公布号 WO2010098676(A1) 申请公布日期 2010.09.02
申请号 WO2010NO00074 申请日期 2010.02.25
申请人 TATHGAR, HARSHARN 发明人 TATHGAR, HARSHARN
分类号 C01B33/02;C01B33/037;C30B9/10;C30B17/00;C30B29/06 主分类号 C01B33/02
代理机构 代理人
主权项
地址