| 摘要 |
PROBLEM TO BE SOLVED: To reduce parasitic resistance of a fin-type field effect transistor, and increase a driving current. SOLUTION: The semiconductor device includes a semiconductor substrate body 101 and a fin 108 protrusively provided on the semiconductor substrate body 101. The fin 108 includes: a semiconductor substrate structured to have a pair of source/drain regions 106 at both ends and a channel region 107 interposed between the pair of source/drain regions 106; an element separation insulative film 102 formed on the semiconductor substrate body 101 and made of silicon oxide; a coat 109 formed on the element separation insulative film 102 and made of silicon nitride or silicon carbonitride; a gate insulation film formed on the fin 108 in the channel region 107; a gate electrode 103 formed to sandwich the channel region 107 in the fin 108 via the gate insulation film; and a stress application layer 105 covering the source/drain regions 106 and also in tight contact with the coat 109. COPYRIGHT: (C)2010,JPO&INPIT
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