PHOTOSENSORS INCLUDING SEMICONDUCTOR-ON-INSULATOR STRUCTURE
摘要
Photosensor based on SOI technology and display devices comprising the same. The photosensor can be a photodiode or a phototransistor, or a combination thereof when incorporated in a device. The photosensor exhibits a higher photoresponse than a traditional photosensor based on amorphous silicon film or polysilicon thin film technology. The present invention is useful, e.g., in making multifunctional display devices having photosensing function integrated therein.
申请公布号
WO2010099259(A2)
申请公布日期
2010.09.02
申请号
WO2010US25313
申请日期
2010.02.25
申请人
CORNING INCORPORATED;HIRSCHMAN, KARL;MANLEY, ROBERT;KOSIK-WILLIAMS, CARLO;ROCHESTER INSTITUTE OF TECHNOLOGY
发明人
HIRSCHMAN, KARL;MANLEY, ROBERT;KOSIK-WILLIAMS, CARLO