<p>Disclosed is a solar cell (100) comprising a p-type amorphous semiconductor layer (11p), an n-type amorphous semiconductor layer (12n), and a recombination layer (R) intercalated between the p-type amorphous semiconductor layer (11p) and the n-type amorphous semiconductor layer (12n).</p>
申请公布号
WO2010098445(A1)
申请公布日期
2010.09.02
申请号
WO2010JP53086
申请日期
2010.02.26
申请人
SANYO ELECTRIC CO., LTD.;TAKAHAMA, TSUYOSHI;ONO, MASAYOSHI;MORI, HIROYUKI;MURAKAMI, YOUHEI
