发明名称 |
CAPACITOR FABRICATION METHOD, CAPACITOR FABRICATING DEVICE, CAPACITOR FABRICATING PROGRAM, AND RECORDING MEDIUM |
摘要 |
<p>In a capacitor fabrication method, a capacitor is formed by forming a lower electrode film, a thin film dielectric, and an upper electrode film on a substrate, and then defects, including particles and electrical short circuits between the lower electrode and upper electrode, are detected before separating the capacitor into capacitor cells. Next, defects, including particles and electrical short circuits between the lower electrode and upper electrode, are removed before separating the capacitor into capacitor cells.</p> |
申请公布号 |
WO2010098026(A1) |
申请公布日期 |
2010.09.02 |
申请号 |
WO2010JP00853 |
申请日期 |
2010.02.12 |
申请人 |
NEC CORPORATION;SHIBUYA, AKINOBU;TAKEMURA, KOICHI;MANAKO, TAKASHI |
发明人 |
SHIBUYA, AKINOBU;TAKEMURA, KOICHI;MANAKO, TAKASHI |
分类号 |
H01L21/822;H01L21/66;H01L27/04 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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