发明名称 CAPACITOR FABRICATION METHOD, CAPACITOR FABRICATING DEVICE, CAPACITOR FABRICATING PROGRAM, AND RECORDING MEDIUM
摘要 <p>In a capacitor fabrication method, a capacitor is formed by forming a lower electrode film, a thin film dielectric, and an upper electrode film on a substrate, and then defects, including particles and electrical short circuits between the lower electrode and upper electrode, are detected before separating the capacitor into capacitor cells. Next, defects, including particles and electrical short circuits between the lower electrode and upper electrode, are removed before separating the capacitor into capacitor cells.</p>
申请公布号 WO2010098026(A1) 申请公布日期 2010.09.02
申请号 WO2010JP00853 申请日期 2010.02.12
申请人 NEC CORPORATION;SHIBUYA, AKINOBU;TAKEMURA, KOICHI;MANAKO, TAKASHI 发明人 SHIBUYA, AKINOBU;TAKEMURA, KOICHI;MANAKO, TAKASHI
分类号 H01L21/822;H01L21/66;H01L27/04 主分类号 H01L21/822
代理机构 代理人
主权项
地址