LIGHT-EMITTING DEVICE

摘要

The disclosed light-emitting device comprises a mounting substrate and an LED chip with an n-type nitride semiconductor layer, a nitride light-emitting layer, a p-type nitride semiconductor layer, an anode and a cathode. The nitride light-emitting layer is provided on the n-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided on the nitride light-emitting layer. Viewed from the p-type nitride semiconductor layer, the anode is positioned on the side opposite the nitride light-emitting layer. The cathode is provided on the n-type nitride semiconductor layer. The conductor pattern of the mounting substrate is joined to the cathode and the anode via bumps. The LED chip has a dielectric layer. The dielectric layer is formed as at least one island and is positioned between the p-type nitride semiconductor layer and the anode. The p-type semiconductor layer has first regions that overlap the bumps. The dielectric layer is not formed on the first regions.