| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which has a plurality of pin wires at narrow pitches, the plurality of pin wires being nearly constant in height. <P>SOLUTION: The method of manufacturing the semiconductor device includes a step of performing half-cutting a metal wire, having a first end, at a desired position, a step of bonding the first end of the metal wire to an electrode portion 83 of a semiconductor element 85 or the semiconductor device, and a step of cutting the metal wire at the desired position by drawing the metal wire away from the electrode portion to form a pin wire 84, the pin wire having a cut second end 80c. <P>COPYRIGHT: (C)2010,JPO&INPIT |
