| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve high-speed operation in a semiconductor device including memory blocks. <P>SOLUTION: For example, when a plurality of memory arrays ARY[0]-ARY[3] are provided in a memory block MB1, the sizes A[0]-A[3] of the ARY[0]-ARY[3] are different stepwise. More specifically, if a distance between MB1 and an input pad PD_CLK for an internal control signal (e.g., clock signal CLK), and distance between MB1 and an output pad PD_DO for a data signal are ARY[0]<ARY[1]<ARY[2]<ARY[3], A[0]>A[1]>A[2]>A[3] is satisfied. Difference between transfer delay time owing to a difference of distances from the pad can be canceled by a difference between operation delay time of the memory arrays, thereby increasing the overall speed of the MB1. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
