发明名称 LIGHT-EMITTING DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To solve the following problem: in a conventional light-emitting element of a structure in which an organic compound is laminated on an electrode formed of an inorganic material, sufficient luminance cannot be obtained, power consumption is higher, a half-life period of luminance is short, and stability is to be improved. <P>SOLUTION: In the light-emitting device, a lamination structure of a translucent oxide conductive layer containing silicon or silicon oxide is adopted as a hole injection electrode (a positive electrode) in place of a conventional translucent oxide conductive layer of an ITO or the like. Meanwhile, a lamination structure of a translucent oxide conductive layer containing a different content of silicon or silicon oxide is adopted. Preferably, a silicon or silicon oxide concentration in a conductive layer on a side to be connected with a TFT shall be 1-6 atom% and a silicon or silicon oxide concentration on a side of a layer containing an organic compound shall be 7-15 atom%. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010192451(A) 申请公布日期 2010.09.02
申请号 JP20100086652 申请日期 2010.04.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;TAKAYAMA TORU;SAKAMOTO NAOYA;AKIMOTO KENGO;SATO KEIJI;MARUYAMA YOSHIKI
分类号 H05B33/28;G09F9/30;H01L27/32;H01L51/50;H01L51/52;H05B33/10;H05B33/26 主分类号 H05B33/28
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