发明名称 HEAT TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment method that activates implanted impurities and remedy introduced defects as well, while reducing the damage to a substrate. SOLUTION: A light-emission output of a flashlamp for performing a light-irradiation heat treatment on a substrate in which impurities are implanted is increased up to a target value L1 over a period of time from 1 to 100 milliseconds, is kept for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from the target value L1, and is then attenuated from the target value L1 to 0 over a period of time from 1 to 100 milliseconds. That is, compared with conventional flashlamp annealing, the light-emission output of the flashlamp is increased more gradually, is kept to be constant for a certain period of time, and is then decreased more gradually. As a result, a total heat amount of a surface of the substrate increases compared with the conventional case, but a surface temperature thereof rises more gradually and then drops more gradually compared with the conventional case. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010192692(A) 申请公布日期 2010.09.02
申请号 JP20090035642 申请日期 2009.02.18
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 KATO SHINICHI
分类号 H01L21/26 主分类号 H01L21/26
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