| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of inspecting semiconductor devices and a program for inspecting semiconductor devices that restrain hysteresis, has high reproducibility, and obtain highly reliable measurement results. Ž<P>SOLUTION: The method of inspecting semiconductor devices having a floating body type PD-SOI-MOSFET 10 includes: a first process for maintaining a state where a drain current Id is flowing between a source region 7a and a drain region 7b after a gate voltage Vg is applied to a gate electrode 6 and a drain voltage Vd is applied between the source region and the drain region; and a second process for measuring transmission characteristics of the MOSFET 10 after the potential of the body region 9 becomes stable. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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