发明名称 WIDE BAND CAPACITANCE ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a wide band capacitance element which increases an upper limit of a usable frequency of a capacitive component to a high frequency band without reducing the capacitance of a low frequency band. Ž<P>SOLUTION: Dielectric plates 111, 112 having different compositions are formed on a electrode plate 101 while another electrode plate 102 is formed thereon. At least one of the dielectric plates 111, 112 has a singular point of polarization in an object frequency band. For example, the dielectric plate 111 is made from a silicon carbide SiC while the dielectric plate 112 is made from an aluminum oxide Al<SB>2</SB>O<SB>3</SB>. The dielectric plate 111 has a singular point of polarization at 246 MHz. That is, the dielectric constant greatly changes around at the frequency of 246 MHz. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010192466(A) 申请公布日期 2010.09.02
申请号 JP20070118537 申请日期 2007.04.27
申请人 NEC CORP 发明人 MASUDA KOICHIRO;KUSUMOTO MANABU;HARADA TAKASHI
分类号 H01G4/20;H01G4/12;H01G4/18 主分类号 H01G4/20
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