发明名称 DUAL-DIELECTRIC MIM CAPACITORS FOR SYSTEM-ON-CHIP APPLICATIONS
摘要 PURPOSE: A dual dielectric MIM(Metal-Insulation-Metal) capacitor and a manufacturing method thereof are provided to reduce complexity and process steps for forming a capacitor by integrating the capacitor with different function regions. CONSTITUTION: A chip(10) includes a first area(100) and a second area(200). A first MIM capacitor(102) is formed on the first area and includes a first bottom electrode(122), a first top electrode(124), and a capacitor insulator(130) between the first bottom electrode and the first top electrode. A second MIM capacitor(202) is formed on the second area and includes a second bottom electrode(222), a second top electrode(224), and a second capacitor insulator(230) between the second top electrode and the second bottom electrode.
申请公布号 KR20100097010(A) 申请公布日期 2010.09.02
申请号 KR20100004881 申请日期 2010.01.19
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHING KUO CHENG;TU KUO CHI
分类号 H01L27/108 主分类号 H01L27/108
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