| 摘要 |
<p>A positive resist film (102) containing a photo acid generating agent is formed on a substrate (101). Then, pattern exposure is performed by selectively irradiating the resist film (102) with exposure light. Then, first heating is performed to the resist film (102) to which the pattern exposure is performed, and a first resist pattern (102a) is formed on the heated resist film (102) by performing first development. The first resist pattern (102a) is exposed to a solution (104) which contains a thermal acid generating agent but not containing a polymer and a cross-linking agent, and second heating is performed to the first resist pattern (102a) exposed to the solution (104). Then, second development is performed to the heated first resist pattern (102a), and a second resist pattern (102b), i.e., a reduced first resist pattern (102a), is obtained.</p> |
