METHOD OF FORMING INSULATION FILM IN FIELD EFFECT TRANSISTOR USING CARBON NANO MATERIAL AND FIELD EFFECT TRANSISTOR USING CARBON NANO MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a method of forming an insulation film in a field effect transistor using a carbon nano material for forming the insulation film on a channel surface constituted of the carbon nano material by relatively low temperature treatment, and the field effect transistor using the carbon nano material having the insulation film formed by the method.

SOLUTION: The insulation film 106 comprising a silicon oxide film is formed on the channel surface by heating a CNT-FET including a source electrode 104, a drain electrode 105 and a carbon nano-tube 103 provided on a Si substrate 101 with a polysilazane solution 106a applied to the channel surface by an electric furnace 200 to cause the polysilazane solution 106a to react with moisture.

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