METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device including a gate insulating film which can be formed into a thin film and in which film composition control is easy. SOLUTION: The manufacturing method includes steps of: forming a manganese oxide film 12 serving as a gate insulating film on a semiconductor substrate 1 on which a transistor is formed; forming a conductive film 13 serving as a gate electrode on the manganese oxide film 12; and forming a gate electrode 13 and a gate insulating film 12 by forming the conductive film 13 and the manganese oxide film 12. COPYRIGHT: (C)2010,JPO&INPIT