发明名称 Four-Terminal Gate-Controlled LVBJTs
摘要 An integrated circuit structure includes a well region of a first conductivity type, an emitter of a second conductivity type opposite the first conductivity type over the well region, a collector of the second conductivity type over the well region and substantially encircling the emitter, and a base contact of the first conductivity type over the well region. The base contact is horizontally spaced apart from the emitter by the collector. At least one conductive strip horizontally spaces the emitter, the collector, and the base contact apart from each other. A dielectric layer is directly under, and contacting, the at least one conductive strip.
申请公布号 US2010219504(A1) 申请公布日期 2010.09.02
申请号 US20100715071 申请日期 2010.03.01
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN CHIA-CHUNG;CHEN SHUO-MAO;KUO CHIN-WEI;LIU SALLY
分类号 H01L29/735 主分类号 H01L29/735
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