| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming process for reducing a distance between resist patterns while suppressing pattern collapse and development defects, and to provide a resist-modifying composition suitably used for the above pattern forming process. <P>SOLUTION: The pattern forming process includes: (1) a first resist pattern formation step of applying a positive resist composition, which contains a polymer compound having a repeating unit that increases alkali solubility with an action of an acid and a lactone structure-containing repeating unit, on a substrate to form a first resist film, heat-treating the resist film, followed by exposing to high energy rays, heat-treating and alkali-developing to form a first resist pattern mainly composed of a line pattern; (2) a modification step of applying a resist-modifying composition on the pattern and heating; and (3) a step of applying a second positive resist material on the first pattern after modification, heat-treating, exposing, and heat-treating followed by alkali-developing to form a second resist pattern mainly composed of a line pattern parallel to the first resist pattern. The resist film after the modification, in an unexposed part, has a contact angle with pure water of 50 to 85 degrees. The present invention provides the effective pattern forming process and the resist-modifying composition, achieving a double patterning process of processing a substrate through two exposure steps and single dry etching. <P>COPYRIGHT: (C)2010,JPO&INPIT |
