| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of operating and controlling a charge trap type memory device capable of suppressing movable charges in the charge trap type memory device and improving reliability compared with conventional ones, to provide the charge trap type memory device, and to provide an operation control program. Ž<P>SOLUTION: The operation control method for the charge trap type memory device 100 having a layered structure in which a tunnel oxide film 111, a charge trap film 112, a blocking insulation film 113 and a gate electrode 114 are formed on a silicon substrate 110 includes steps of applying voltage to the gate electrode 114, thereby trapping and detrapping the charges on the charge trap film 112 from the side of the silicon substrate 110 to write and erase information. For the erase operation, negative voltage is applied to the gate electrode 114 for erasion, and thereafter positive voltage is applied to the gate electrode 114. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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