| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can freely adjust a resistance value of a metal silicide layer, irrespective of thickness of the metal silicide layer in a part including a boundary part. Ž<P>SOLUTION: The semiconductor device is provided with an N channel-type transistor forming region 14 and a P channel-type transistor forming region 16, which are formed in a semiconductor substrate 12; and a gate electrode which extends over the N channel-type transistor forming region 14 and the P channel-type transistor forming region 16, has the part, including the boundary part, which is formed in a region including a boundary line L of the N channel-type transistor forming region 14 and the P channel-type transistor forming region 16; and a non-boundary part formed in a region which does not include the boundary line and is provided with a conductive silicon layer 28 and the metal silicide layers 30 (30A and 30B), which are formed on a surface of the conductive silicon layer 28 and in which thickness, in the part that includes the boundary part and that in the non-boundary part differ. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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