| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus to improve etching uniformity when a back surface of a substrate is etched with a high-temperature chemical liquid. SOLUTION: The chemical-liquid processing apparatus 1 removes a film formed on a wafer W as the substrate by etching with a high-temperature chemical liquid. The apparatus includes a spin chuck 3 to hold the wafer W horizontally in a state where its back surface faces downward, a rotating mechanism 4 to rotate the spin chuck 3 by a hollow rotating shaft 12 extending vertically, a chemical-liquid discharge nozzle 5 provided in the rotating shaft 12 to supply the high-temperature chemical liquid to the back surface of the wafer W by discharging the high-temperature chemical liquid upwardly, and a chemical-liquid supply mechanism 6 to supply the chemical liquid to the chemical-liquid discharge nozzle 5. The chemical-liquid discharge nozzle 5 includes a plurality of outlets 18a, 18b and 18c discharging the high-temperature chemical liquid to a plurality of places on the back surface of the wafer W in different distances from the center of the back surface of the wafer W, other than the center of the back surface of the wafer W. COPYRIGHT: (C)2010,JPO&INPIT
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