发明名称 Circuitry and method for indicating a memory
摘要 Circuitry and a method for indicating a multiple-type memory is disclosed. The multiple-type memory includes memory blocks in communication with control logic blocks. The memory blocks and the control logic blocks are configured to emulate a plurality of memory types. The memory blocks can be configured into a plurality of vertically stacked memory planes. The vertically stacked memory planes may be used to increase data storage density and/or the number of memory types that can be emulated by the multiple-type memory. Each memory plane can emulate one or more memory types. The control logic blocks can be formed in a substrate (e.g., a silicon substrate including CMOS circuitry) and the memory blocks or the plurality of memory planes can be positioned over the substrate and in communication with the control logic blocks. The multiple-type memory may be non-volatile so that stored data is retained in the absence of power.
申请公布号 US2010220543(A1) 申请公布日期 2010.09.02
申请号 US20100800088 申请日期 2010.05.06
申请人 UNITY SEMICONDUCTOR CORPORATION 发明人 NORMAN ROBERT
分类号 G11C8/10;G11C5/02;G11C7/00 主分类号 G11C8/10
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