发明名称 ELECTRON BEAM PROCESSING DEVICE AND METHOD USING CARBON NANOTUBE EMITTER
摘要 Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.
申请公布号 US2010221922(A1) 申请公布日期 2010.09.02
申请号 US20100780686 申请日期 2010.05.14
申请人 RUEGER NEAL R;WILLIAMSON MARK J;SANDHU GURTEJ S 发明人 RUEGER NEAL R.;WILLIAMSON MARK J.;SANDHU GURTEJ S.
分类号 H01L21/3065 主分类号 H01L21/3065
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