EMBEDDED MEMORY CELL AND METHOD OF MANUFACTURING SAME
摘要
An embedded memory cell includes a semiconducting substrate (110), a transistor (120) having a source/drain region (121) at least partially embedded in the semiconducting substrate, and a capacitor (130) at least partially embedded in the semiconducting substrate. The capacitor includes a first electrode (131) and a second electrode (132) that are electrically isolated from each other by a first electrically insulating material (133). The first electrode is electrically connected to the semiconducting substrate and the second electrode is electrically connected to the source/drain region of the transistor.
申请公布号
WO2010078051(A3)
申请公布日期
2010.09.02
申请号
WO2009US68524
申请日期
2009.12.17
申请人
INTEL CORPORATION;KAVALIEROS, JACK T.;MUKHERJEE, NILOY;DEWEY, GILBERT;SOMASEKHAR, DINESH;DOYLE, BRIAN S.
发明人
KAVALIEROS, JACK T.;MUKHERJEE, NILOY;DEWEY, GILBERT;SOMASEKHAR, DINESH;DOYLE, BRIAN S.