SEMICONDUCTOR PHOTODETECTION ELEMENT

摘要

Disclosed is a semiconductor photodetection element (SP) equipped with: a silicon substrate (21) which is comprised of a first conductivity type semiconductor, and has a first main surface (21a) and a second main surface (21b) which oppose each other, with a second conductivity type semiconductor layer (23) formed on the first main surface (21a) side; and charge-transfer electrodes (25) which are provided above the first main surface (21a) and which transfer a generated charge. A first conductivity type accumulation layer (31) which has a higher impurity concentration than that of the silicon substrate (21) is formed on the second main surface (21b) side of the silicon substrate (21), and irregular recesses and projections (10) are formed at least in the region opposing the semiconductor region (23) of the second main surface (21b). The region of the second main surface (21b) of the silicon substrate (21) where the irregular recesses and projections (10) are formed is optically exposed.