FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor which can reduce source resistance by overcoming problems on heat resistance of a gate electrode material. SOLUTION: In the field effect transistor, a first high-concentration carrier region 6 is formed by activation after implanting ions in one or both of a source region 3 and a drain region 6 where a source electrode 8 and a drain electrode 10 are formed respectively with a gate electrode 9 in-between, and a second high-concentration carrier region which is a thermal diffusion region 7 is formed by diffusing carriers through a heat treatment in a region between a channel region 4 formed right below the gate electrode 9 and the first high-concentration carrier region 6. The first high-concentration carrier region 6 is formed adjacently to and/or overlapping the second high-concentration carrier region 7 formed adjacently to the channel region 4 each other, and also deeper than the second high-concentration carrier region 7 formed deeper than the channel region 4. The carrier concentration of the first high-concentration carrier region 6 is made higher than that of the second high-concentration carrier region 7 and the carrier concentration of the second high-concentration carrier region 7 is made higher than the channel region 4. COPYRIGHT: (C)2010,JPO&INPIT