| 摘要 |
A complimentary metal oxide semiconductor (CMOS) sensor system in one embodiment includes a doped well extending along a first axis of a doped substrate, a first electrical contact positioned within the doped well, a second electrical contact positioned within the doped well and spaced apart from the first electrical contact along the first axis, a third electrical contact positioned within the doped well and located between the first electrical contact and the second electrical contact along the first axis, and a fourth electrical contact electrically coupled to the doped well at a location of the doped well below the third electrical contact.
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