| 发明名称 |
RBESSERTE TRANSISTOREIGENSCHAFTEN |
| 摘要 |
Semiconductor devices with improved transistor performance are fabricated by forming a composite oxide/nitride liner under a gate electrode sidewall spacer. Embodiments include depositing a conformal oxide layer by decoupled plasma deposition, depositing a conformal nitride layer by decoupled plasma deposition, depositing a spacer layer and then etching. |
| 申请公布号 |
DE60237109(D1) |
申请公布日期 |
2010.09.02 |
| 申请号 |
DE2002637109 |
申请日期 |
2002.12.19 |
| 申请人 |
ADVANCED MICRO DEVICES INC. |
发明人 |
BULLER, JAMES F.;WU, DAVID;LUNING, SCOTT;WRISTERS, DERICK J.;KADOSH, DANIEL |
| 分类号 |
H01L21/336;H01L21/8238;H01L27/092;H01L29/49;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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