RESIST MATERIAL AND PATTERN-FORMING METHOD USING SAME

摘要

A resist film (102) is formed on a substrate (101), and a pattern exposure is carried out by selectively irradiating the resist film (102) with exposure light.  After that, the pattern exposed resist film (102) is heated and the heated resist film (102) is developed, thereby forming a resist pattern (102a) from the resist film (102).  The resist material constituting the resist film (102) contains an ionic photoacid generator, a first polymer containing an acid-cleavable group and a hydrophilic group, and a molecule or second polymer having a lower affinity to the photoacid generator than the first polymer.