| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that strikes a balance between the high breakdown voltage and the low on-resistance owing to complete depletion in a second drift region. <P>SOLUTION: An SJ structure where an N-type second drift region 10 and a P-type region 9 are arranged is formed on one side of an element isolation trench 5. A conductor 15 is embedded in the element isolation trench 5 through an element isolation insulating film 14. The conductor 15 is connected to a gate electrode 12. As a result, a gate voltage applied to the gate electrode 12 is also applied to the conductor 15. Thus, electrons are stored near the element isolation insulating film 14 in the second drift region 10, causing resistance in the second drift region 10 to be lowered. <P>COPYRIGHT: (C)2010,JPO&INPIT |
