| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem wherein the performance of TFT elements is changed by the film thickness of insulating layers since hydrogen is scattered to the outside of the TFT elements at a lapse of time when an excessive amount of hydrogen enters, electrical characteristicss of the TFT elements become unstable, and the amount of hydrogen increases hydrogen concentration in a gate electrode so that hydrogen is swept together following gate oxidation although the amount of hydrogen contained in the gate electrode of the inverted stagger type TFT elements affects the characteristics of the gate insulating layers of the TFT elements using the metal, and the value of insulation resistance of the TFT elements can be ideally increased, for example, when the amount of hydrogen in the gate electrode is increased. Ž<P>SOLUTION: The amount of hydrogen in the gate electrode 102 is adjusted by correcting the thickness of the gate insulating layer 103 obtained by oxidizing the gate electrode 102. The hydrogen concentration in the gate electrode 102 is maintained to be constant regardless of the thickness of the gate insulating layer 103, thus obtaining the TFT element having a high insulation resistance value and high reliability while restraining scattering of hydrogen. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
