| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device tape carrier which can stably form fine wiring remarkably reduced in dispersion and high in dimensional accuracy by making the wiring fine, and by uniformly etching the wiring as a whole. Ž<P>SOLUTION: A resist pattern 5 is formed by forming resist coat on a surface of a metal conductor layer 2 of a tape carrier substrate 3 where the metal conductor layer 2 is formed on an insulating film substrate 1 and exposing and developing resist coat by using a pattern mask. The metal conductor layer 2 is etched with the resist pattern 5 as an etching mask, and the wiring pattern having desired wiring 6 is formed in the manufacturing method of the semiconductor device tape carrier. A shape of the resist pattern 5 is formed by uniformly adding an etching margin to a size in a width direction with respect to the wiring 6 of the wiring pattern and a dummy resist pattern 8 for forming dummy wiring 7 in a blank region is added to the wiring 6 in a region where the wiring density of the wiring pattern is coarse. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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