发明名称 |
LOW COST SOI SUBSTRATES FOR MONOLITHIC SOLAR CELLS |
摘要 |
A lost cost method for fabricating SOI substrates is provided. The method includes forming a stack of p-type doped amorphous Si-containing layers on a semiconductor region of a substrate by utilizing an evaporation deposition process. A solid phase recrystallization step is then performed to convert the amorphous Si-containing layers within the stack into a stack of p-type doped single crystalline Si-containing layers. After recrystallization, the single crystalline Si-containing layers are subjected to anodization and at least an oxidation step to form an SOI substrate. Solar cells and/or other semiconductor devices can be formed on the upper surface of the inventive SOI substrate.
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申请公布号 |
US2010221867(A1) |
申请公布日期 |
2010.09.02 |
申请号 |
US20090436249 |
申请日期 |
2009.05.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;DE SOUZA JOEL P.;FOGEL KEITH E.;HOVEL HAROLD J.;INNS DANIEL A.;KIM JEEHWAN;SADANA DEVENDRA K.;SAENGER KATHERINE L.;SHAHIDI GHAVAM G. |
分类号 |
H01L31/0376;H01L21/762 |
主分类号 |
H01L31/0376 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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