| 发明名称 |
SEMICONDUCTOR DEVICE HAVING A METAL OXIDE CHANNEL |
| 摘要 |
A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.
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| 申请公布号 |
US2010219411(A1) |
申请公布日期 |
2010.09.02 |
| 申请号 |
US20100779348 |
申请日期 |
2010.05.13 |
| 申请人 |
HOFFMAN RANDY L;HERMAN GREGORY S;MARDILOVICH PETER P |
发明人 |
HOFFMAN RANDY L.;HERMAN GREGORY S.;MARDILOVICH PETER P. |
| 分类号 |
H01L29/12;H01L21/16;H01L29/786 |
主分类号 |
H01L29/12 |
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